Features: ·Low VCE(sat).·Excellent DC current gain characteristics.·NPN silicon transistor.PinoutSpecifications Parameter Symbol Rating Unit Collector-base voltageCollector-emitter voltageEmitter-base voltageCollector currentCollector power dissipationJunction temperatureStora...
2SD2098: Features: ·Low VCE(sat).·Excellent DC current gain characteristics.·NPN silicon transistor.PinoutSpecifications Parameter Symbol Rating Unit Collector-base voltageCollector-emit...
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Parameter |
Symbol |
Rating |
Unit |
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature |
V CBO V CEO V EBO I C P C T j Tstg |
50 20 6 5 0.5 150 -55 to +150 |
V V V A W °C °C |
Features of the 2SD2098 are:(1)low VCE(sat) VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A);(2)excellent DC current gain characteristics.
The absolute maximum ratings of the 2SD2098 can be summarized as:(1):the parameter is collector to base voltage,the symbol is VCBO,the limits is 50,the unit is V;(2):the parameter is collector to emitter voltage,the symbol is VCEO,the limits is 20,the unit is V;(3):the parameter is emitter to base voltage,the symbol is VEBO,the limits is 6,the unit is V;(4):the parameter is peak collector current,the symbol is ICP,the limits is 10,the unit is A;(5):the parameter is collector current,the symbol is IC,the limits is 5,the unit is A;(6):the parameter is collector power dissipation,the symbol is PC,the limits is 0.5,2,the unit is W;(7):the parameter is junction temperature,the symbol is Tj,the limits is 150,the unit is ;(8):the parameter is storage temperature,the symbol is Tstg,the limits is -55 to +150,the unit is .
The electrical characteristics of the 2SD2098 can be summarized as:(1):the parameter is collector-base breakdown voltage,the symbol is BVCBO,the limits is 50,the unit is V;(2):the parameter is collector-emitter breakdown voltage,the symbol is BVCEO,the limits is 20,the unit is V;(3):the parameter is collector cutoff current,the symbol is ICBO,the limits is 0.5,the unit is A;(4):the parameter is emitter cutoff current,the symbol is IEBO,the limits is 0.5,the unit is mA;(5):the parameter is collector-emitter saturation voltage,the symbol is VCE(sat),the typ is 0.25,the max is 1.0,the unit is V;(6):the parameter is DC current transfer ratio,the symbol is hFE,the min is 120,the max is 390;(7):the parameter is transition frequency,the symbol is fT,the typ is 150,the unit is MHz;(8):the parameter is collector output capacitance,the symbol is Cob,the max is 30,the unit is pF.