2SD2012(F,M)

Transistors Bipolar (BJT) NPN VCEO 60V VCE 0.4 Ic 2A Audio Freq App

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SeekIC No. : 00208497 Detail

2SD2012(F,M): Transistors Bipolar (BJT) NPN VCEO 60V VCE 0.4 Ic 2A Audio Freq App

floor Price/Ceiling Price

US $ .25~.3 / Piece | Get Latest Price
Part Number:
2SD2012(F,M)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.3
  • $.28
  • $.25
  • $.25
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Packaging : Tube    

Description

Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Tube


Parameters:

Technical/Catalog Information2SD2012(F,M)
VendorToshiba
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)3A
Power - Max2W
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 2A
Frequency - Transition3MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SD2012 F,M
2SD2012F,M



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