2SD2012

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Packaging : Tube
Maximum DC Collector Current : 3 A
Emitter- Base Voltage VEBO : 7 V
DC Collector/Base Gain hfe Min : 20
Maximum Operating Frequency : 3 MHz
Package / Case : TO-220F


Application

·Audio frequency power amplifier and general purpose switching applications




Pinout






Specifications

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	Open emitter	140	V
VCEO	Collector-emitter voltage	Open base	140	V
VEBO	Emitter-base voltage	Open collector	5	V
IC	Collector current		7	A
IB	Base current		0.1	A
PC	Collector power dissipation	Ta=25 TC=25	2.0 25	W
Tj	Junction temperature		150
Tstg	Storage temperature		-55~150

Description

Features of the 2SD2012 are:(1)high DC current gain:hFE(1)=100(Min);(2)low saturation voltage: VCB(sat)=1.0V(Max);(3)high power dissipation:Pc=25W(Tc=25).

The absolute maximum ratings of the 2SD2012 can be summarized as:(1):the parameter is collector to base voltage,the symbol is VCBO,the limits is 60,the unit is V;(2):the parameter is collector to emitter voltage,the symbol is VCEO,the limits is 60,the unit is V;(3):the parameter is emitter to base voltage,the symbol is VEBO,the limits is 7,the unit is V;(4):the parameter is peak collector current,the symbol is IC,the limits is 3,the unit is A;(5):the parameter is base current,the symbol is IB,the limits is 0.5,the unit is A;(6):the parameter is collector power dissipation Ta=25,the symbol is PC,the limits is 2.0,the unit is W;(7):the parameter is collector power dissipation Tc=25,the symbol is PC,the limits is 25,the unit is W;(8):the parameter is junction temperature,the symbol is Tj,the limits is 150,the unit is ;(9):the parameter is storage temperature,the symbol is Tstg,the limits is -55 to +150,the unit is .

The electrical characteristics of the 2SD2012 can be summarized as:(1):the parameter is collector cut-off current,the symbol is ICBO,the limits is 100,the unit is A;(2):the parameter is emitter cut-off current,the symbol is ICBO,the limits is 100,the unit is A;(3):the parameter is collector-emitter breakdown voltage,the symbol is V(BR)CEO,the limits is 60,the unit is V;(4):the parameter is DC current transfer ratio,the symbol is hFE(1),the min is 100,the max is 320;(5):the parameter is DC current transfer ratio,the symbol is hFE(2),the min is 20;(6):the parameter is collector-emitter saturation voltage,the symbol is VCE(sat),the typ is 0.4,the max is 1.0,the unit is V;(7):the parameter is base-emitter voltage,the symbol is VBE,the min is 0.75,the max is 1.0,the unit is V;(8):the parameter is transition frequency,the symbol is fT,the typ is 3,the unit is MHz;(9):the parameter is collector output capacitance,the symbol is Cob,the max is 35,the unit is pF.

`With TO-220F package
`Complement to type 2SB1366
`Low collector saturation voltage
`Collector power dissipation:
P_C=25W(T_C=25)