Features: • High speed.• High breakdown voltage (VCBO=1500V).• High reliability (Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.Specifications SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 1500 V ...
2SC6093LS: Features: • High speed.• High breakdown voltage (VCBO=1500V).• High reliability (Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.Specificatio...
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SYMBOL | PARAMETER | RATING | UNIT |
VCBO | Collector to base voltage | 1500 | V |
VCEO | Collector to emitter voltage | 800 | V |
VEBO | Emitter to base voltage | 5 | V |
IC | Collector current | 5 | A |
ICP | Collector current (pulse) | 12 | A |
PC | Collector dissipation | 2.0 | W |
PC | Collector dissipationTC = 25 | 25 | W |
Tj | Junction temperature | 150 | |
Tstg | Storage temperaturerange | -55 to +150 |