2SC6082

Series: -
Transistor Type: NPN
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Voltage - Collector Emitter Breakdown (Max): 50V
Mounting Type: Through Hole
Power - Max: 2W
Frequency - Transition: 195MHz
Packaging: Bulk
Manufacturer: ON Semiconductor
Package / Case: TO-220-3 Full Pack
Current - Collector (Ic) (Max): 15A
Supplier Device Package: TO-220ML
Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V


Features:

• Adoption of MBIT process.
• Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.


Application

• High-speed switching applications (switching regulator, driver circuit).


Specifications

SYMBOL	PARAMETER	Conditions	RATING	UNIT
VCBO	Collector to base voltage		60	V
VCES	Collector to emitter voltage		60	V
VCEO	Collector-to-Emitter Voltage		50	V
VEBO	Emitter to base voltage		6	V
ICP	Collector Peak Current (Pulse)	PW 10ms, duty cycle 10%	20	A
IC	Collector current		15	A
IB	Base Current		3	A
PC	Collector Dissipation	Tc=25°C	2 25	W
Tj	Max. Operating Junction Temperature		150
Tstg	Storage temperature		55to~150