Specifications Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEX 160 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 9 V Collector current DC IC 2.0 A...
2SC6079: Specifications Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEX 160 V Collector-emitter voltage VCEO...
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Characteristic |
Symbol |
Rating |
Unit | |
Collector-base voltage |
VCBO |
160 |
V | |
Collector-emitter voltage |
VCEX |
160 |
V | |
Collector-emitter voltage |
VCEO |
80 |
V | |
Emitter-base voltage |
VEBO |
9 |
V | |
Collector current |
DC |
IC |
2.0 |
A |
Pulse |
ICP |
4.0 |
A | |
Base current |
IB |
1.5 |
A | |
Collector power dissipation |
PC |
1 |
W | |
Junction temperature |
Tj |
150 |
||
Storage temperature range |
Tstg |
-55~150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test repor and estimated failure rate, etc).