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2SC6078

Application• Low collector saturation voltage: VCE (sat) = 0.5 V (max)(IC = 1A)• High-speed switching: tstg = 0.4 s (typ)Specifications Parameter Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEX 160 V VCEO 80 V Emitter-bas...

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2SC6078: Application• Low collector saturation voltage: VCE (sat) = 0.5 V (max)(IC = 1A)• High-speed switching: tstg = 0.4 s (typ)Specifications Parameter Symbol Rating Unit Collector-...

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Part Number:
2SC6078
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5000

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Description



Application

• Low collector saturation voltage: VCE (sat) = 0.5 V (max)(IC = 1A)
• High-speed switching: tstg = 0.4 s (typ)


Specifications

Parameter Symbol Rating Unit
Collector-base voltage VCBO 160 V
Collector-emitter voltage VCEX 160 V
VCEO 80 V
Emitter-base voltage VEBO 7 V
Collector Current DC IC 3 A
Pulse ICP 5
Base current IB 1.0 A
Collector power dissipation PC 1.8 W
Junction Temperature Tj 150
Storage Temperature Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


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