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Application・High-DC current gain: hFE = 120 to 300 (IC = 0.1 A)・Low-collector-emitter saturation: VCE (sat) = 0.14 V (max)・High-speed switching: tf = 0.2 s (typ)Specifications Characteristics Symbol Rating Unit Collector-base voltage VCBO 180 V Col...

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SeekIC No. : 004223768 Detail

2SC6061: Application・High-DC current gain: hFE = 120 to 300 (IC = 0.1 A)・Low-collector-emitter saturation: VCE (sat) = 0.14 V (max)・High-speed switching: tf = 0.2 s (typ)Specifications ...

2SC6061 Data Sheet

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Part Number:: 2SC6061
Supply Ability:: 5000

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Upload time: 2024/11/23

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Product Details

Description

Application

・High-DC current gain: h_FE = 120 to 300 (IC = 0.1 A)
・Low-collector-emitter saturation: V_{CE (sat)} = 0.14 V (max)
・High-speed switching: tf = 0.2 s (typ)

Specifications

Characteristics		Symbol	Rating	Unit
Collector-base voltage		V_CBO	180	V
Collector-emitter voltage		V_CEX	150	V
Collector-emitter voltage		V_CEO	120	V
Emitter-base voltage		V_EBO	7	V
Collector current(Note1)	DC	I_C	1.0	A
Collector current(Note1)	Pulse	I_CP	2.0	A
Base current		I_B	0.1	mA
Collector power dissipation (Note 2)	t = 10s	P_C	1000	mW
Collector power dissipation (Note 2)	DC	P_C	625	mW
Junction temperature		T_j	150
Storage temperature range		T_stg	−55 to 150

Note 1: Ensure that the channel temperature does not exceed 150

Note 2: Mounted on FR4 board (glass epoxy, 1.6mm thick, Cu area: 645 mm2)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

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2SC6061

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