Application`High-speed switching: tf = 0.2s (max) (IC = 0.3 A) `High breakdown voltage: VCES = 800 V, VCEO= 410 V Specifications Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage VCBOVCESVCEOVE...
2SC6040: Application`High-speed switching: tf = 0.2s (max) (IC = 0.3 A) `High breakdown voltage: VCES = 800 V, VCEO= 410 V Specifications Characteristic Symbol Rating Unit Collector-base...
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Characteristic |
Symbol |
Rating |
Unit | |
Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage |
VCBO VCES VCEO VEBO |
800 800 410 8 |
V V V V | |
Collector current | DC |
IC |
1.0 |
A |
Pulse |
ICP |
2.0 | ||
Base current |
IB |
0.5 |
A | |
Collector power dissipation |
Ta =25 |
PC |
1.0 |
|
Junction temperature Storage temperature range |
Tj Tstg |
150 -55 to 150 |