Features: ·High speed switching. (Tf : Typ. : 30ns at IC = 3A)·Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA)·Strong discharge power for inductive load and capacitance load.· Complements the 2SA2071.Application· NPN Silicon epitaxial planar transistorSpecifications ...
2SC5824: Features: ·High speed switching. (Tf : Typ. : 30ns at IC = 3A)·Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA)·Strong discharge power for inductive load and capacitance load....
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter |
Symbol |
Rating |
Unit |
Collector-base voltage |
VCBO |
60 |
V |
Collector-emitter voltage |
VCEO |
60 |
V |
Emitter-base voltage |
VEBO |
6 |
V |
Collector current |
IC |
3 |
A |
ICP |
6 |
A*1 | |
Power dissipation |
PC |
500 |
mW*2 |
PC |
2.0 |
W*3 | |
Junction temperature |
Tj |
150 |
°C |
Range Storage temperature |
Tstg |
?55 to +150 |
°C |