2SC5466

DescriptionThe 2SC5466 is a kind of transistor. It is silicon NPN triple diffused type. The device is designed for dynamic focus applications, high voltage switching applications and high voltage amplifier applications. It features high voltage (VCEO=800 V). What comes next is about the absolute ...

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SeekIC No. : 004223582 Detail

2SC5466: DescriptionThe 2SC5466 is a kind of transistor. It is silicon NPN triple diffused type. The device is designed for dynamic focus applications, high voltage switching applications and high voltage am...

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Part Number:
2SC5466
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/10

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Product Details

Description



Description

The 2SC5466 is a kind of transistor. It is silicon NPN triple diffused type. The device is designed for dynamic focus applications, high voltage switching applications and high voltage amplifier applications. It features high voltage (VCEO=800 V).

What comes next is about the absolute maximum ratings of 2SC5466 at Ta=25: (1)collector to base voltage, VCBO: 800 V; (2)collector to emitter voltage, VCEO: 800 V; (3)emitter to base voltage, VEBO: 5 V; (4)collector current, IC: 50 mA; (5)base current, IB: 25 mA; (6)collector dissipation, PC: 2.0 W at Ta=25 and 10 W at Tc=25; (7)junction temperature, Tj: 150; (8)storage temperature, Tstg: -55 to +150.

The following is the electrical characteristics of 2SC5466 at Ta=25: (1)collector cutoff current, ICBO: 1.0A max at VCB=640 V, IE=0; (3)emittor cutoff current, IEBO: 10A max at VEB=5 V, IC=0; (4)DC current gain, hFE: 15 min at VCE=5 V, IC=7 mA; (5)collector-base breakdown voltage, V(BR)CBO: 900 V min at IC=1 mA, IE=0; (7)collector-emitter voltage, VCE(sat): 1.0 V max at IC=20 mA, IB=4 mA; (8)base-emitter voltage, VBE(sat): 1.5 V max at IC=20 mA, IB=4 mA; (9)transition frequency, fT: 5.5 MHz typ at VCE=10 V, IC=3 mA; (10)collector output capacitance, Cob: 2.2 pF at VCB=100 V, f=1 MHz.




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