2SC5465

The 2SC5465 is a kind of transistor. It is silicon NPN triple diffused type. The device is designed for switching regulator and high voltage switching applications as well as high speed DC-DC converter applications. There are some features as follows: (1)excellent switching times (IC=0.08 A): tr=0.7s max, tf=0.5s max; (2)high collector breakdown voltage: VCEO=800 V.

What comes next is the absolute maximum ratings of 2SC5465 at Ta=25: (1)collector to base voltage, VCBO: 900 V; (2)collector to emitter voltage, VCEO: 800 V; (3)emitter to base voltage, VEBO: 7 V; (4)collector current, IC: 0.8 A when DC and 1.5 A when pulse; (5)base current, IB: 0.2 A; (6)collector dissipation, PC: 1.0 W at Ta=25 and 20 W at Tc=25; (7)junction temperature, Tj: 150; (8)storage temperature, Tstg: -55 to +150.

The following is the electrical characteristics of 2SC5465 at Ta=25: (1)collector cutoff current, ICBO: 100A max at VCB=800 V, IE=0; (3)emittor cutoff current, IEBO: 1 mA max at VEB=7 V, IC=0; (4)DC current gain, hFE: 10 min at VCE=5 V, IC=1 mA; 15 min at VCE=5 V, IC=0.08 A; (5)collector-base breakdown voltage, V(BR)CBO: 900 V min at IC=1 mA, IE=0; (7)collector-emitter breakdown voltage, V(BR)CEO: 800 V min at IC=10 mA, IB=0; (8)collector-emitter voltage, VCE(sat): 1.0 V max at IC=0.3 A, IB=0.06 A; (9)base-emitter voltage, VBE(sat): 1.3 V max at IC=0.3 A, IB=0.06 A.