2SC5464FT

The 2SC5464FT is a kind of transistor. It is silicon NPN epitaxial planar type. The device is designed for VHF-UHF band low noise amplifier applications. There are some features as follows: (1)low noise figure, high gain; (2)NF=1.1 dB, |S21e|2=12 dB (f=1 GHz).

What comes next is about the absolute maximum ratings of 2SC5464FT at Ta=25: (1)collector to base voltage, VCBO: 20 V; (2)collector to emitter voltage, VCEO: 12 V; (3)emitter to base voltage, VEBO: 3 V; (4)collector current, IC: 60 mA; (5)base current, IB: 30 mA; (6)collector dissipation, PC: 100 mA; (7)junction temperature, Tj: 125; (8)storage temperature, Tstg: -55 to +125.

The following is about the electrical characteristics of 2SC5464FT at Ta=25: (1)collector cutoff current, ICBO: 1.0A max at VCB=10 V, IE=0; (3)emittor cutoff current, IEBO: 1A max at VEB=1 V, IC=0; (4)DC current gain, hFE: 80 min and 240 max at VCE=8 V, IC=15 mA; (5)output capacitance, Cob: 0.75 pF typ at VCB=8 V, IE=0, f=1 MHz; (7)reverse capacitance, Cob: 0.5 pF typ at VCB=8 V, IE=0, f=1 MHz; (8)transition frequency, fT: 5 GHz min and 7 GHz typ at VCE=8 V, IC=15 mA; (9)insertion gain, |S21e|2: 17.5 dB typ at VCE=8 V, IC=15 mA, f=500 MHz; 8 dB min and 12 dB typ at VCE=8 V, IC=15 mA, f=1 GHz; (10)noise figure, NF: 1 dB typ  at VCE=8 V, IC=5 mA, f=500 MHz; 1.1 dB typ and 2 dB max at VCE=8 V, IC=5 mA, f=1 GHz.