2SC5460

The 2SC5460 is a kind of transistor. It is silicon NPN triple diffused type. The device is designed for dynamic focus applications, high voltage switching applications and high voltage amplifier applications. It features high voltage (VCEO=800 V).

What comes next is the absolute maximum ratings of 2SC5460 at Ta=25: (1)collector to base voltage, VCBO: 800 V; (2)collector to emitter voltage, VCEO: 800 V; (3)emitter to base voltage, VEBO: 5 V; (4)collector current, IC: 50 mA; (5)base current, IB: 25 mA; (6)collector dissipation, PC: 1.5 W at Ta=25 and 10 W at Tc=25; (7)junction temperature, Tj: 150; (8)storage temperature, Tstg: -55 to +150.

The following is the electrical characteristics of 2SC5460 at Ta=25: (1)collector cutoff current, ICBO: 1.0A max at VCB=-640 V, IE=0; (2)emittor cutoff current, IEBO: 10A max at VEB=5 V, IC=0; (3)DC current gain, hFE: 15 min at VCE=5 V, IC=7 mA; (4)transition frequency, fT: 5.5 MHz typ at VCE=10 V, IC=3 mA; (5)output capacitance, Cob: 2.2 pF typ at VCB=100 V, f=1 MHz; (6)collector-emitter saturation voltage, VCE(sat): 1.5 V max at IC=20 mA, IB=4 mA; (7)base-emitter voltage, VBE(sat): 1.5 V max at IC=20 mA, IB=4 mA.