Features: · High speed.· High breakdown voltage (VCBO=1600V).· High reliability (Adoption of HVP process).· Adoption of MBIT process.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltag...
2SC5450: Features: · High speed.· High breakdown voltage (VCBO=1600V).· High reliability (Adoption of HVP process).· Adoption of MBIT process.PinoutSpecifications Parameter Symbol Conditions ...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
1600 |
V | |
Collector-to-Emitter Voltage |
VCES |
800 |
V | |
Emitter-to-Base Voltage |
VEBO |
6 |
V | |
Collector Current |
IC |
10 |
A | |
Collector Current (Pulse) |
ICP |
25 |
A | |
Collector Dissipation |
PC |
2.0 |
W | |
Tc=25°C |
70 |
W | ||
Junction Temperature |
Tj |
150 |
||
Storage Temperature |
Tstg |
-55 to +150 |
Absolute maximum ratings | |
---|---|
VCBO [V] | 1600 |
VCEO [V] | 800 |
IC [A] | 10 |
PC[W] | 70
Tc=25°C |
Electrical characteristics | |
---|---|
hFE min | 15 |
hFE max | 30 |
VCE [V] | 5 |
IC [A] | 1 |
VCE (sat) max [V] | 5 |
IC [A] | 7 |
IB [A] | 1.75 |
tf max [µs] | 0.2 |