Features: · High breakdown voltage (VCBO=1000V).· High reliability (Adoption of HVP process).· Adoption of MBIT process.Specifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1000 V Collector-to-Emitter Voltage VCEO ...
2SC5420: Features: · High breakdown voltage (VCBO=1000V).· High reliability (Adoption of HVP process).· Adoption of MBIT process.Specifications Parameter Symbol Conditions Ratings Unit ...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
1000 |
V | |
Collector-to-Emitter Voltage |
VCEO |
450 |
V | |
Emitter-to-Base Voltage |
IEBO |
9 |
V | |
Drain Current |
IC |
5 |
A | |
Collector Current (Pulse) |
ICP |
10 |
A | |
Allowable Power Dissipation |
PD |
1.75 |
W | |
Tc=25°C |
50 |
W | ||
Channel Temperature |
Tj |
150 |
°C | |
Storage Temperature |
Tstg |
55 to +150 |
°C |