2SC5376

DescriptionThe 2SC5376 is designed as toshiba transistor silicon NPN epitaxial planar type for audio frequency general purpose amplifier applications and for muting and switching applications.2SC5376 has two features. (1)Low collector saturation voltage which would be 15mV typ at Ic=10mA and Ib=0....

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SeekIC No. : 004223534 Detail

2SC5376: DescriptionThe 2SC5376 is designed as toshiba transistor silicon NPN epitaxial planar type for audio frequency general purpose amplifier applications and for muting and switching applications.2SC537...

floor Price/Ceiling Price

Part Number:
2SC5376
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Description

The 2SC5376 is designed as toshiba transistor silicon NPN epitaxial planar type for audio frequency general purpose amplifier applications and for muting and switching applications.

2SC5376 has two features. (1)Low collector saturation voltage which would be 15mV typ at Ic=10mA and Ib=0.5mA. (2)High collector current would be 400mA max. Those are all the main features.

Some absolute maximum ratings of 2SC5376 have been concluded into several points as follow. (1)Its collector to base voltage would be  15V. (2)Its collector to emitter voltage would be 12V. (3)Its emitter to base voltage would be 5V. (4)Its collector current would be 400mA. (5)Its base current would be 50mA. (6)Its collector power dissipation would be 100mW. (7)Its junction temperature would be 125°C. (8)Its storage temperature range would be from -55°C to 125°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SC5376 are concluded as follow. (1)Its collector cutoff current would be max 0.1uA with conditions of Vcb=15V and Ie=0. (2)Its emitter cutoff current would be max 0.1uA with conditions of Veb=5V and Ic=0. (3)Its DC current gain would be min 300 and max 1000. (4)Its collector to emitter saturation voltage would be typ 15mV and max 30mV with conditions of Ic=10mA and Ib=0.5mA. (5)Its base to emitter voltage would be typ 0.87V and max 1.2V with conditions of Ic=200mA and Ib=10mA. (6)Its transition frequency would be min 80MHz and typ 130MHz. (7)Its collector output capacitance would be typ 4.2pF. (8)Its collector to emitter on resistance would be typ 0.9 ohms.

It should be noted that the information contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information about 2SC5376 please contact us for details. Thank you!




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