Features: · High speed (tf=100ns typ).· High breakdown voltage (VCBO=1500V).· High reliability (Adoption of HVP process).· Adoption of MBIT process.Specifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emit...
2SC5301: Features: · High speed (tf=100ns typ).· High breakdown voltage (VCBO=1500V).· High reliability (Adoption of HVP process).· Adoption of MBIT process.Specifications Parameter Symbol Condi...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
|
1500 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
800 |
V |
Emitter-to-Base Voltage |
VEBO |
|
6 |
V |
Collector Current |
IC |
|
20 |
A |
Collector Current (Pulse) |
ICP |
|
40 |
A |
Collector Dissipation |
PC |
|
4.6 |
W |
Tc=25°C |
120 |
W | ||
Junction Temperature |
Tj |
|
150 |
°C |
Storage Temperature |
Tstg |
|
55 to +150 |
°C |