Features: • High breakdown voltage(VCBO=1200V).• High reliability(Adoption of HVP process).• Adoption of MBIT process.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1200 V Collector-to-Emitter...
2SC5265LS: Features: • High breakdown voltage(VCBO=1200V).• High reliability(Adoption of HVP process).• Adoption of MBIT process.PinoutSpecifications Parameter Symbol Conditions ...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
1200 |
V | |
Collector-to-Emitter Voltage |
VCEO |
600 |
V | |
Emitter-to-Base Voltage |
VEBO |
9 |
V | |
Collector Current |
Ic |
4 |
mA | |
Collector Current (pulse) |
Icp |
8 |
mA | |
Collector Dissipation |
Pc |
2 |
mW | |
Tc=25°C |
30 |
mW | ||
Junction Temperature |
Tj |
150 |
°C | |
Storage Temperature |
Tstg |
55 to +150 |
°C |
Absolute maximum ratings | |
---|---|
VCEO [V] | 600 |
IC [A] | 4 |
PC Tc=25°C [W] | 30 |
Electrical characteristics | |
---|---|
hFE (1) min | 30 |
hFE (1) max | 50 |
VCE [V] | 5 |
IC [A] | 0.3 |
hFE (2) min | 10 |
VCE [V] | 5 |
IC [A] | 1.5 |
fT typ [MHz] | - |
VCE [V] | - |
IC [A] | - |
tf max [µs] | 0.15 |