2SC5260

The 2SC5260 is a kind of silicon NPN epitaxial planar type. It is widely used in VHF-UHF band low noise amplifier applications. There is some information about the features: (1)low noise figure: NF=1.7 dB (f=2 GHz); (2)high gain: 8.5 dB (f=2 GHz).

What comes next is the absolute maximum ratings of 2SC5260 at Ta=25: (1)collector to base voltage, VCBO: 15 V; (2)collector to emitter voltage, VCEO: 7 V; (3)emitter to base voltage, VEBO: 1.5 V; (4)collector current, IC: 15 mA; (5)base current, IB: 7 mA; (6)collector dissipation, PC: 100 mW; (7)junction temperature, Tj: 125; (8)storage temperature, Tstg: -55 to +125.

The following is the eletrical characteristics of 2SC5260 at Ta=25: (1)collector cut-off current, ICBO: 1A at VCB=10 V, IE=0; (2)emittor cutoff current, IEBO: 1A max at VEB=1 V, IC=0; (3)DC current gain, hFE: 50 min and 160 max at VCE=5 V, IC=7 mA; (4)output capacitance, cob: 0.4 pF typ at VCB=5 V, f=1 MHz, IE=0; (5)reverse transfer capacitance, cre: 0.3 pF typ and 0.7 pF max at VCB=5 V, f=1 MHz, IE=0.