2SC5176

The 2SC5176 is a kind of transistor. It is silicon NPN epitaxial type (PCT process). It is intended for high current switching applications and DC-DC converter applications. There are two features as follows: (1)low saturation voltage: VCE(sat)=0.4 V (max) (at IC=3 A); (2)high speed switching time: tstg=1.0s (typ).

What comes next is the absolute maximum ratings of 2SC5176(Ta=25): (1)collector-base voltage, VCBO: 100 V; (2)collector-emitter voltage, VCEO: 80 V; (3)emitter-base voltage, VEBO: 7 V; (4)collector current, DC, IC: 5 A; (5)collector current, pulse, ICP: 8 A ; (6)base current, IB: 1 A ; (7)collector power dissipation, PC: 1.8 W; (8)junction temperature, Tj: 150; (9)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SC5176(Ta=25): (1)collector cutoff current, ICBO: 1.0A max at VCB=100 V, IE=0; (2)emitter cutoff current, IEBO: 1.0A max at VEB=7 V, IC=0; (3)collector-emitter breakdown voltage, V(BR)CEO: 80 V min at IC=10 mA, IB=0; (4)DC current gain, hFE: 70 min and 240 max at VCE=1 V, IC=1 A; 40 min at VCE=1 V, IC=3 A; (5)collector-emitter saturation voltage, VCE(sat): 0.2 V typ and 0.4 V max at IC=3 A, IB=0.15 A; (6)base-emitter saturation voltage, VBE(sat): 0.9 V typ and 1.2 V max IC=3 A, IB=0.15 A; (7)transition frequency, fT: 120 MHz typ at VCE=4 V, IC=1 A; (8)collector output capacitance, Cob: 80 pF typ at VCB=10 V, IE=0, f=1 MHz.