2SC5175

The 2SC5175 is a kind of transistor. It is silicon NPN epitaxial type. It is intended for high current switching applications. There are two features as follows: (1)low saturation voltage: VCE(sat)=0.4 V (max) (at IC=2.5 A, IB=125 mA); (2)high speed switching time: tstg=0.8s (typ).

What comes next is the absolute maximum ratings of 2SC5175(Ta=25): (1)collector-base voltage, VCBO: 60 V; (2)collector-emitter voltage, VCEO: 50 V; (3)emitter-base voltage, VEBO: 5 V; (4)collector current, DC, IC: 5 A; (5)collector current, pulse, ICP: 8 A ; (6)base current, IB: 1 A ; (7)collector power dissipation, PC: 1.8 W; (8)junction temperature, Tj: 150; (9)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SC5175(Ta=25): (1)collector cutoff current, ICBO: 1.0A max at VCB=50 V, IE=0; (2)emitter cutoff current, IEBO: 1.0A max at VEB=6 V, IC=0; (3)collector-emitter breakdown voltage, V(BR)CEO: 50 V min at IC=10 mA, IB=0; (4)DC current gain, hFE: 100 min and 320 max at VCE=1 V, IC=1 A; 60 min at VCE=1 V, IC=2.5 A; (5)collector-emitter saturation voltage, VCE(sat): 0.25 V typ and 0.4 V max at IC=2.5 A, IB=125 mA; (6)base-emitter saturation voltage, VBE(sat): 1.0 V typ and 1.3 V max IC=2.5 A, IB=125 mA; (7)transition frequency of 2SC5175, fT: 100 MHz typ at VCE=4 V, IC=1 A; (8)collector output capacitance, Cob: 45 pF typ at VCB=10 V, IE=0, f=1 MHz.