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2SC5172

Features: • Excellent switching times: tr = 0.5 s (max), tf = 0.3 s (max) at IC = 2 A• High collector breakdown voltage: VCEO = 400 VSpecifications PARAMETER SYMBOL Rating UNIT Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 400 ...

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2SC5172: Features: • Excellent switching times: tr = 0.5 s (max), tf = 0.3 s (max) at IC = 2 A• High collector breakdown voltage: VCEO = 400 VSpecifications PARAMETER SYMBOL Rating ...

2SC5172 Data Sheet

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Part Number:
2SC5172
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5000

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Product Details

Description



Features:

• Excellent switching times: tr = 0.5 s (max),
                                            tf = 0.3 s (max) at IC = 2 A
• High collector breakdown voltage: VCEO = 400 V


Specifications

PARAMETER
SYMBOL
Rating
UNIT
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
7
V
Collector current DC
IC
5
A
Pulse
ICP
7
Base current
IB
2
A
Collectorl power dissipation Ta = 25
PC
2.0
W
Tc = 25
25
Junction temperature
Tj
150
Storage temperature
Tstg
-55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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