DescriptionThe 2SC5154 is a kind of transistor. It is silicon NPN epitaxial type (PCT process). It is intended for power amplifier applications and driver state amplifier applications. It has high transition frequency which is 100 MHz (typ). What comes next is the absolute maximum ratings of 2SC5...
2SC5154: DescriptionThe 2SC5154 is a kind of transistor. It is silicon NPN epitaxial type (PCT process). It is intended for power amplifier applications and driver state amplifier applications. It has high t...
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The 2SC5154 is a kind of transistor. It is silicon NPN epitaxial type (PCT process). It is intended for power amplifier applications and driver state amplifier applications. It has high transition frequency which is 100 MHz (typ).
What comes next is the absolute maximum ratings of 2SC5154(Ta=25): (1)collector-base voltage, VCBO: 160 V; (2)collector-emitter voltage, VCEO: 160 V; (3)emitter-base voltage, VEBO: 5 V; (4)collector current, DC, IC: 1.5 A; (5)collector current, pulse, ICP: 3 A ; (6)base current, IB: 0.15 A ; (7)collector power dissipation, PC: 1.3 W; (8)junction temperature, Tj: 150; (9)storage temperature range, Tstg: -65 to 150.
The following is the electrical characteristics of 2SC5154 (Ta=25): (1)collector cutoff current, ICBO: 1.0A max at VCB=160 V, IE=0; (2)emitter cutoff current, IEBO: 1.0A max at VEB=5 V, IC=0; (3)collector-emitter breakdown voltage, V(BR)CEO: 160 V min at IC=10 mA, IB=0; (4)DC current gain, hFE: 70 min and 240 max at VCE=5 V, IC=100 mA; (5)collector-emitter saturation voltage, VCE(sat): 1.0 V max at IC=500 mA, IB=50 mA; (6)base-emitter voltage, VBE: 0.75 V typ and 0.95 V max at VCE=5 V, IC=500 mA; (7)transition frequency, fT: 100 MHz typ at VCE=10 V, IC=100 mA; (8)collector output capacitance, Cob: 25 pF typ at VCB=10 V, IE=0, f=1 MHz.