Specifications Characteristic Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 30 mA Collector current IC 60 mA Collector power d...
2SC5110: Specifications Characteristic Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 ...
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Characteristic |
Symbol |
Rating |
Unit | |
Collector-base voltage |
VCBO |
20 |
V | |
Collector-emitter voltage |
VCEO |
10 |
V | |
Emitter-base voltage |
VEBO |
3 |
V | |
Base current |
IB |
30 |
mA | |
Collector current |
IC |
60 |
mA | |
Collector power dissipation |
PC |
100 |
mW | |
Junction temperature |
Tj |
125 |
||
Storage temperature range |
Tstg |
-55~125 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Conce and Methods") and individualreliability data (i.e. reliability test report and estimated failure rate, etc).