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2SC5090

Application• Low noise figure, high gain.• NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)Specifications Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 ...

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2SC5090: Application• Low noise figure, high gain.• NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)Specifications Characteristics Symbol Rating Unit Collector-base voltage VCBO ...

2SC5090 Data Sheet

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Part Number:
2SC5090
Supply Ability:
5000

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Product Details

Description



Application

• Low noise figure, high gain.
• NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)


Specifications

Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
1.5
V
Base current
IB
20
mA
Collector current
IC
40
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
Storage temperature range
Tstg
−55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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