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2SC5087

Application• Low noise figure, high gain.• NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)PinoutSpecifications Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCES 600 V Emitter-base voltage VE...

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2SC5087: Application• Low noise figure, high gain.• NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)PinoutSpecifications Characteristics Symbol Rating Unit Collector-base voltage ...

2SC5087 Data Sheet

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Part Number:
2SC5087
Supply Ability:
5000

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  • 1~5000
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Upload time: 2024/11/21

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Product Details

Description



Application

• Low noise figure, high gain.
• NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)


Pinout

Connection Diagram


Specifications

Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCES
600
V
Emitter-base voltage
VEBO
3
V
Base current
IB
40
mA
Collector current
IC
80
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
Storage temperature range
Tstg
-55 to 125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  ignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and  timated failure rate,etc).




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