Features: • Low noise figure, high gain.• NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)Description Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V ...
2SC5086: Features: • Low noise figure, high gain.• NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)Description Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 ...
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Characteristics |
Symbol |
Rating |
Unit |
Collector-base voltage |
VCBO |
20 |
V |
Collector-emitter voltage |
VCEO |
12 |
V |
Emitter-base voltage |
VEBO |
3 |
V |
Base current |
IB |
40 |
mA |
Collector current |
IC |
80 |
mA |
Collector power dissipation |
PC |
100 |
mW |
Junction temperature |
Tj |
125 |
|
Storage temperature range |
Tstg |
-55~125 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause 2SC5086 to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).