2SC5085

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate,etc).

The 2SC5085 can applicated in VHF-UHF band low nosie amplifier applications(CHIP: fT=16GHz series). If you want to know more imformation about 2SC5324, please go to our website. The features of 2SC5085 can be summarized as (1) low nosie figure: NF=1.1dB(1GHz); (2) high gain: [S21e]2=11dB(1GHz).

The absolute maximum ratings of 2SC5085 are (1)collector-base voltage VCBO: 20 V; (2)collector-emitter voltage VCEO: 12 V; (3)emitter-base voltage VEBO: 3 V; (4)collector current :40 mA; (5)base current IB :5 mA; (6)collector power dissipation PC: 100 mW; (7)junction temperature Tj: 125 °C; (8)storage temperature range Tstg: -55 to 125°C.

The electerical characteristics of this device are (1)collector cut-off current ICBO @VCB=8V, IE=0 : 1 A; (2)emitter cut-off current IEBO @VEB=1V, IC=0: 1 A; (3)DC current gain (hFE) @VCE=3V, IC=7mA, hFE: 80 to 240 V; (4)output capacitance Cob @VCB= 2.5V IE=0 f=1MHz: 1.0(typ)pF; (5)reverse transfer capacitance Cre @VCB=2.5V IE=0 f=1MHz: 0.65(typ) to 1.15 pF. This device eletrostatic sensitivity. Please handle with caution. If you want to know more information about the 2SC5085, please download the datasheet in www.seekic.com or www.chinaicmart.com .