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2SC5070

Features: · High current capacity.· Adoption of MBIT process.· High DC current gain.· Low collector-to-emitter saturation voltage.· High VEBO.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 30 V Collector-to-Emitter Voltage VCEO ...

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SeekIC No. : 004223307 Detail

2SC5070: Features: · High current capacity.· Adoption of MBIT process.· High DC current gain.· Low collector-to-emitter saturation voltage.· High VEBO.PinoutSpecifications Parameter Symbol Conditions ...

2SC5070 Data Sheet

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Part Number:
2SC5070
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High current capacity.
· Adoption of MBIT process.
· High DC current gain.
· Low collector-to-emitter saturation voltage.
· High VEBO.




Pinout






Specifications

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 30 V
Collector-to-Emitter Voltage VCEO 25 V
Emitter-to-Base Voltage VEBO 15 V
Collector Current IC 2 A
Collector Current (Pulse) ICP 4 A
Base Current IB 0.4 A
Collector Dissipation PC 1.5 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg 55 to +150 °C


Absolute maximum ratings
VCEO [V] 25
VEBO [V] 15
IC [A] 2
PC [W] 1.5
Electrical characteristics
hFE min 800
hFE max 3200
VCE [V] 5
IC [mA] 500
VCE (sat) typ [V] 0.15
VCE (sat) max [V] 0.5
IC [mA] 1000
IB [mA] 20





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