Features: ·Low saturation voltage, typically VCE(sat)=0.12V at IC/ IB=500mA/50mA·PC=2W (on 40×40×0.7mm ceramic board)· Complements the 2SA1900Specifications Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V ...
2SC5053: Features: ·Low saturation voltage, typically VCE(sat)=0.12V at IC/ IB=500mA/50mA·PC=2W (on 40×40×0.7mm ceramic board)· Complements the 2SA1900Specifications Parameter Symbol Rating U...
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Parameter |
Symbol |
Rating |
Unit |
Collector-base voltage |
VCBO |
-60 |
V |
Collector-emitter voltage |
VCEO |
-50 |
V |
Emitter-base voltage |
VEBO |
-5 |
V |
Collector current |
IC |
-1 |
A (Pulse)*1 |
-2 | |||
W | |||
Collector power dissipation |
PC |
0.5 |
W *2 |
2 | |||
Collector power dissipation |
Tj |
150 |
°C |
Storage temperature |
Tstg |
−55 to +150 |
°C |
The 2SC5053 is designed as one kind of medium power transistor (50V, 1A) that has three points of features:(1)Low saturation voltage, typically VCE(sat)=0.12V at IC/ IB=500mA/50mA; (2)PC=2W (on 40*40*0.7mm ceramic board); (3)Complements the 2SA1900.
The absolute maximum ratings of the 2SC5053 can be summarized as:(1)Collector-base voltage: -60 V;(2)Collector-emitter voltage:-50 V;(3)Emitter- base voltage:-5 V;(4)Collector current:-1 or -2 A;(5)Collector power dissipation: 0.5 W or 2 W;(6)Collector power dissipation: 150 ;(7)Storage temperature: -55 to +150 .
The electrical characteristics of this device can be summarized as:(1)Collector-base breakdown voltage: -60 V;(2)Collector-emitter breakdown voltage: -50 V;(3)Emitter-base breakdown voltage: -5 V;(4)Collector cutoff current: -0.1 uA;(5)Emitter cutoff current: -0.5 uA;(6)Collector-emitter saturation voltage: -0.4 V;(7)DC current transfer ratio: 120 to 270;(8)Transition frequency: 150 MHz;(9)Output capacitance: 20 pF. If you want to know more information about the 2SC5053, please download the datasheet in www.seekic.com or www.chinaicmart.com .