2SC5045

       2SC5045 is a kind of NPN triple diffused planar silicon transistor  which has a very high-defination CRT dispaly and horizontal deflection output apllications. It has four unique features: the first one is high speed which is 100 ns typ . The second one is high reliability (HVP process). The third one is high breakdown voltage which is 1600 V. The forth one is adoption of MBIT process.
       There are some absolute maximum ratings about 2SC5045 when Ta is 25. Collector to base voltage (V_CBO) is 1600 V . Collector to emitter votlage (V_CEO) is 800 V . Emitter to base voltage (V_EBO) is 6 V . Collector current (Ic) is 15 A. Collector current (pulse)(I_CP) is 35A. Collector dissipation (Pc) is 3.0 W. and is 75 W when Tc is 25. Junction temperature (Tj) is 150.Storage temperature (Tstg) is -55 to 150 . Otherwise, there are also some electrical characteristics about it when Ta is 25. Collector cutoff current (ICBO) is 10 A max when VCB is 800 V and IE is 0. Collector cutoff current(I_CES) is 1.0 mA max when V_CE is 1600 V and R_BE is 0. Collector sustain voltage (VCEO(sus)) is 800 V min when Ic is 100 mA and IB is 0. Emitter cutoff current (I_EBO) is 1.0 mA max when V_EB is 4 V and Ic is 0. C-E saturation voltage (V_CE(sat) ) is 5 V max when Ic is 12 A and I_B is 3 A. B-E saturation voltage(V_BE(sat) ) is 1.5 V max when Ic is 12 A and IB is 3 A. DC current gain(h_FE1) is 15 min and 25 max when V_CE is 5 V and Ic is 1 A. and (h_FE2 ) is 4 min and 7 max when V_CE is 5 V and Ic is 12 A. Storage time (Tstg) is 2.0s max when Ici s 8 A , IB1 is 1.3 A and IB2 is -4.0 A. Fall time (t_f) is 0.1 s typ and 0.2 s max when Ic is 8 A , IB1 is 1.3 A  and IB2 is -4.0 A.  
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