2SC5043

2SC5043 is a kind of NPN triple diffused planar silicon transistor which has a very high-defination CRT dispaly and horizontal deflection output apllications. It has five unique features: the first one is high speed which is 100 ns typ . The second one is high reliability (HVP process). The third one is high breakdown voltage which is 1600 V. The forth one is adoption of MBIT process. The fifth one is on-chip damper diode.
There are some absolute maximum ratings about 2SC5043 when Ta is 25. Collector to base voltage (V_CBO) is 1600 V . Collector to emitter votlage (V_CEO) is 800 V . Emitter to base voltage (V_EBO) is 6 V . Collector current (Ic) is 10 A. Collector current (pulse)(I_CP) is 25A. Collector dissipation (Pc) is 3.0 W. and is 70 W when Tc is 25. Junction temperature (Tj) is 150.Storage temperature (Tstg) is -55 to 150 . otherwise, there are also some electrical characteristics about it when Ta is 25. Collector cutoff current (I_CBO) is 10 A max when V_CB is 800 V and I_E is 0. Collector cutoff current(I_CES) is 1.0 mA max when V_CE is 1600 V and R_BE is 0. Collector sustain voltage (V_CEO(sus) ) is 800 V min when Ic is 100 mA and IB is 0. Emitter cutoff current (I_EBO) is 40 mA min and 130 mA max when V_EB is 4 V and Icis 0. C-E saturation voltage (V_CE(sat) ) is 5 V max when Ic is 8 A and IB is 2 A. B-E saturation voltage(V_BE(sat) ) is 1.5 V max when Icis 8 A and I_B is 2 A. DC current gain(h_FE1) is 10 min and 20 max when V_CE is 5 V and Ic is 1 A. and (h_FE2) is 4 min and 7 max when V_CE is 5 V and Ic is 8 A. Storage time (Tstg) is 2.0s max when Ici s 6 A , I_B1 is 1.0 A and I_B2 is -3.0 A. Fall time (tf) is 0.1 s typ and 0.2 s max when Ic is 6 A , I_B1 is 1.0 A and I_B2 is -3.0 A.
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