Features: ·High speed (tf=100ns typ).·High reliability (HVP process).·High breakdown voltage (VCBO=1600V).·Adoption of MBIT process.·On-chip damper diode.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collec...
2SC5041: Features: ·High speed (tf=100ns typ).·High reliability (HVP process).·High breakdown voltage (VCBO=1600V).·Adoption of MBIT process.·On-chip damper diode.PinoutSpecifications Parameter Sym...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
1600 |
V | |
Collector-to-Emitter Voltage |
VCEO |
800 |
V | |
Emitter-to-Base Voltage |
VEBO |
6 |
V | |
Collector Current |
IC |
7 |
A | |
Collector Current (Pulse) |
ICP |
16 |
A | |
Collector Dissipation |
PC |
3.0 |
W | |
Tc=25 |
60 |
W | ||
Junction Temperature |
Tj |
150 |
||
Storage Temperature |
Tstg |
55 to +150 |
Absolute maximum ratings | |
---|---|
VCBO [V] | 1600 |
VCEO [V] | 800 |
IC [A] | 7 |
PC[W] | 60
Tc=25°C |
Electrical characteristics | |
---|---|
hFE min | 4 |
hFE max | 7 |
VCE [V] | 5 |
IC [A] | 5 |
VCE (sat) max [V] | 5 |
IC [A] | 5 |
IB [A] | 1.25 |
tf max [µs] | 0.2 |