2SC5019

The 2SC5019 is designed as silicon NPN epitaxial planer type for UHF band low-noise amplification.

2SC5019 has four features. The first one is it would have low noise figure NF. The second one is it would have high gain. The third one is it would have high transition frequency fT. The fourth one is mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. That are all the main features.

Some absolute maximum ratings of 2SC5019 have been concluded into several points as follow. The first one is about its collector to base voltage which would be 15V. The second one is about its collector to emitter voltage which would be 10V. The third one is about its emitter to base voltage which would be 2V. The fourth one is about its collector current which would be 80mA. The fifth one is about its collector power dissipation which would be 1W. The sixth one is about its junction temperature range which would be 150°C. The seventh one is about its storage temperature range which would be from -55°C to +150°C.

Also some electrical characteristics about 2SC5019. The first one is about its collector cutoff current which would be max 1uA. The second one is about its emitter cutoff current which would be max 1uA. The third one is about its collector to base voltage which would be min 15V. The fourth one is about its collector to emitter voltage which would be min 10V. The fifth one is about its forward current transfer ratio which would be min 80 and max 250. The sixth one is about its transition frequency which would be min 5GHz and typ 6GHz. The seventh one is about its collector output capacitance which would be typ 0.9pF and max 1.2pF. The eighth one is about its forward transfer gain which would be min 7.5dB and typ 10dB. And so on. For more information please contact us.