Features: The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride pas...
2SC5010: Features: The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capabili...
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The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary fabrication technique.
Parameter |
Symbol |
Rating |
Unit |
Collector-base voltage |
VCBO |
9 |
V |
Collector-emitter voltage |
VCEO |
6 |
V |
Emitter-base voltage |
VEBO |
2 |
V |
Collector current |
IC |
30 |
A |
Collector power dissipation |
PT |
125 |
W |
Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
-65to+150 |
°C |
The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary fabrication technique.