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2SC5010

Features: The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride pas...

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SeekIC No. : 004223268 Detail

2SC5010: Features: The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capabili...

2SC5010 Data Sheet

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Part Number:
2SC5010
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary fabrication technique.




Specifications

Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
9
V
Collector-emitter voltage
VCEO
6
V
Emitter-base voltage
VEBO
2
V
Collector current
IC
30
A
Collector power dissipation
PT
125
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-65to+150
°C



Description

The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary fabrication technique.




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