Features: • Low Voltage Use.• High fT : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)• Low Cre : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)• Low NF : 1.4 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)• High |S21e|2: 12 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)...
2SC5007: Features: • Low Voltage Use.• High fT : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)• Low Cre : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)• Low NF : 1.4 dB TYP. (@ VCE...
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Parameter |
Symbol |
Rating |
Unit |
Collector-base voltage |
VCBO |
20 |
V |
Collector-emitter voltage |
VCEO |
10 |
V |
Emitter-base voltage |
VEBO |
1.5 |
V |
Collector current |
IC |
65 |
A |
Collector power dissipation |
PT |
150 |
W |
Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
-65to+150 |
°C |
The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique.