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2SC5007

Features: • Low Voltage Use.• High fT : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)• Low Cre : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)• Low NF : 1.4 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)• High |S21e|2: 12 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)...

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SeekIC No. : 004223265 Detail

2SC5007: Features: • Low Voltage Use.• High fT : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)• Low Cre : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)• Low NF : 1.4 dB TYP. (@ VCE...

2SC5007 Data Sheet

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Part Number:
2SC5007
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/8/13

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Product Details

Description



Features:

• Low Voltage Use.
• High fT : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
• Low Cre : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
• Low NF : 1.4 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
• High |S21e|2: 12 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
• Ultra Super Mini Mold Package.


Specifications

Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
1.5
V
Collector current
IC
65
A
Collector power dissipation
PT
150
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-65to+150
°C



Description

The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique.




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