2SC5006

Features:

•Low Voltage Use.
•High f_T:  4.5 GHz TYP. (@ V_CE= 3 V, I_C = 7 mA, f = 1 GHz)
•Low C_re:  0.7 pF TYP. (@ V_CE= 3 V, I_E = 0, f = 1 MHz)
•Low NF:  1.2 dB TYP. (@ V_CE= 3 V, I_C= 7 mA, f = 1 GHz)
•High |S_21e|2:  9 dB TYP. (@ V_CE = 3 V, I_C = 7 mA, f = 1 GHz)
•Ultra Super Mini Mold Package.


Specifications

Collector to Base Voltage                                   V_CBO                   20                    V
Collector to Emitter Voltage                                V_CEO                  12                     V
Emitter to Base Voltage                                      V_EBO                  3.0                    V
Collector Current                                                 I_C                      100                 mA
Total Power Dissipation                                       P_T                    1250               mW
Junction Temperature                                          T_j                      150                   
Storage Temperature                                          T_stg               65 to +150         


Description

The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band.  Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.  This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique.