Features: • High fT : fT=400MHz(typ).• High breakdown voltage : VCEO200V(min).• Large current capacitance. • Small reverse transfer capacitance and excellent high -frequency characteristic : Cre=3.4pF(NPN), 4.2pF(PNP).• Adoption of FBET process.Specifications ...
2SC4976: Features: • High fT : fT=400MHz(typ).• High breakdown voltage : VCEO200V(min).• Large current capacitance. • Small reverse transfer capacitance and excellent high -frequency ...
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Parameter |
Symbol |
Conditions |
Limits |
Unit |
Collector-base voltage | VCBO |
(-)200 |
V |
|
Collector-emitter voltage | VCEO |
(-)200 |
V |
|
Emitter-base voltage | VEBO |
(-)3 |
V |
|
Collector current | IC |
(-)300 |
mA |
|
Collector dissipation | ICP |
(-)600 |
mA |
|
Base Current | IB |
(-)30 |
mA |
|
Collector Dissipation | PC |
0.8 |
W
|
|
Tc=25°C | 12 |
W |
||
Junction temperature | Tj |
150 |
||
Storage temperature | Tstg |
--55 to +150 |