2SC4976

Features: • High fT : fT=400MHz(typ).• High breakdown voltage : VCEO200V(min).• Large current capacitance. • Small reverse transfer capacitance and excellent high -frequency characteristic : Cre=3.4pF(NPN), 4.2pF(PNP).• Adoption of FBET process.Specifications ...

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2SC4976 Picture
SeekIC No. : 004223246 Detail

2SC4976: Features: • High fT : fT=400MHz(typ).• High breakdown voltage : VCEO200V(min).• Large current capacitance. • Small reverse transfer capacitance and excellent high -frequency ...

floor Price/Ceiling Price

Part Number:
2SC4976
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• High fT : fT=400MHz(typ).
• High breakdown voltage : VCEO200V(min).
• Large current capacitance.
• Small reverse transfer capacitance and excellent high -frequency characteristic : Cre=3.4pF(NPN), 4.2pF(PNP).
• Adoption of FBET process.



Specifications

Parameter
Symbol
Conditions
Limits
Unit
Collector-base voltage
VCBO
 
(-)200
V
Collector-emitter voltage
VCEO
 
(-)200
V
Emitter-base voltage
VEBO
 
(-)3
V
Collector current
IC
 
(-)300
mA
Collector dissipation
ICP
 
(-)600
mA
Base Current
IB
 
(-)30
mA
Collector Dissipation
PC
 
0.8
W
Tc=25°C
12
W
Junction temperature
Tj
 
150
Storage temperature
Tstg
 
--55 to +150



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