2SC4901YK-TR-E

The 2SC4901YK-TR-E is one member of the 2SC4901 family which is designed as the silicon NPN epitaxial device that can be used in UHF / VHF wide band amplifier applications. Features of this device are:(1)High gain bandwidth product fT = 9 GHz Typ; (2)High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz.

The absolute maximum ratings of the 2SC4901YK-TR-E can be summarized as:(1)Collector to base voltage: 15 V;(2)Collector to emitter voltage: 9 V;(3)Emitter to base voltage: 1.5 V;(4)Collector current: 50 mA;(5)Collector power dissipation: 100 mW;(6)Junction temperature: 150 °C;(7)Storage temperature:55 to +150 °C.

The electrical characteristics of this device can be summarized as:(1)Collector to base breakdown voltage: 15 V;(2)Collector cutoff current: 10 uA or 1 mA;(3)Emitter cutoff current: 10 A;(4)DC current transfer ratio: 50 to 250;(5)Collector output capacitance: 0.9 to 1.4 pF;(6)Gain bandwidth product: 6.0 to 9.0 GHz;(7)Power gain: 10.0 to 13.0 dB;(8)Noise figure: 1.2 to 2.5 dB. If you want to know more information about the 2SC4901YK-TR-E, please download the datasheet in www.seekic.com or www.chinaicmart.com .