Features: · Adoption of FBET process.· High fT : fT=300MHz.· High breakdown voltage : VCEO=200V.· Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.2pF/NPN, 2.7pF/PNP.· Possible to offer the 2SA1853/2SC4827 devices in a tepa reel packaging, which facilitates au...
2SC4827: Features: · Adoption of FBET process.· High fT : fT=300MHz.· High breakdown voltage : VCEO=200V.· Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.2pF/NPN, 2.7p...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-base voltage |
VCBO |
()200 |
V | |
Collector-emitter voltage |
VCEO |
()200 |
V | |
Emitter-base voltage |
VEBO |
()3 |
V | |
Collector current |
Ic |
()200 |
mA | |
Collector Current (Pulse) |
ICP |
()300 |
mA | |
Collector Dissipation |
PC |
1.3 |
W | |
Junction temperature |
Tj |
150 |
°C | |
Storage temperature |
Tstg |
-55 to +150 |
°C |