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2SC4826

Features: • Adoption of FBET process.• High fT : fT=300MHz(typ).• High breakdown voltage : VCEO=200V.• Small reverse transfer capacitance and excellent high frequency characteristic :Cre=1.5pF / NPN, 1.8pF / PNP.• Shipped in reel tape container to facilitate antomatic...

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2SC4826: Features: • Adoption of FBET process.• High fT : fT=300MHz(typ).• High breakdown voltage : VCEO=200V.• Small reverse transfer capacitance and excellent high frequency charact...

2SC4826 Data Sheet

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Part Number:
2SC4826
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/28

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Product Details

Description



Features:

• Adoption of FBET process.
• High fT : fT=300MHz(typ).
• High breakdown voltage : VCEO=200V.
• Small reverse transfer capacitance and excellent high frequency characteristic :Cre=1.5pF / NPN, 1.8pF / PNP.
• Shipped in reel tape container to facilitate antomatic mounting.


Application

• High definition CRT display video output, wide-band amplifer.


Specifications

Parameter
Symbol
 Conditions
Ratings
Unit
Collector-base voltage
VCBO
  
()200
V
Collector-emitter voltage
VCEO
  
()200
V
Emitter-base voltage
VEBO
  
()3
V
Collector current
Ic
  
()100
mA
Collector Current (Pulse)
ICP
  
()200
mA
Base Current
IB
()20
mA
Collector Dissipation
PC
1.3
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to +150
°C



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