Features: • Adoption of FBET process.• High fT : fT=300MHz(typ).• High breakdown voltage : VCEO=200V.• Small reverse transfer capacitance and excellent high frequency characteristic :Cre=1.5pF / NPN, 1.8pF / PNP.• Shipped in reel tape container to facilitate antomatic...
2SC4826: Features: • Adoption of FBET process.• High fT : fT=300MHz(typ).• High breakdown voltage : VCEO=200V.• Small reverse transfer capacitance and excellent high frequency charact...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-base voltage |
VCBO |
()200 |
V | |
Collector-emitter voltage |
VCEO |
()200 |
V | |
Emitter-base voltage |
VEBO |
()3 |
V | |
Collector current |
Ic |
()100 |
mA | |
Collector Current (Pulse) |
ICP |
()200 |
mA | |
Base Current | IB |
()20 |
mA |
|
Collector Dissipation |
PC |
1.3 |
W | |
Junction temperature |
Tj |
150 |
°C | |
Storage temperature |
Tstg |
-55 to +150 |
°C |