2SC4783

Features: • High DC current gain: hFE2 = 200 TYP.• High voltage: VCEO = 50 VSpecifications Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5.0 V ...

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SeekIC No. : 004223155 Detail

2SC4783: Features: • High DC current gain: hFE2 = 200 TYP.• High voltage: VCEO = 50 VSpecifications Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V ...

floor Price/Ceiling Price

Part Number:
2SC4783
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• High DC current gain: hFE2 = 200 TYP.
• High voltage: VCEO = 50 V



Specifications

Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
5.0
V
Collector current(DC)
IC(DC)
100
mA
Collector Current (pulse) Note1
IC(pulse)
200
mA
Total Power Dissipation (TA = 25°C) Note2
PT

200

mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Notes 1. PW 10 ms, Duty Cycle 50%
          2. When mounted on ceramic substrate of 3.0 cm2 x 0.64 mm



Description

The 2SC4783 is NPN silicon epitaxial transistor.


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