2SC4783 Selling Leads, Price trend, 2SC4783 DataSheet download, circuit diagram from SeekIC.com

Features: • High DC current gain: hFE2 = 200 TYP.• High voltage: VCEO = 50 VSpecifications Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5.0 V ...

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SeekIC No. : 004223155 Detail

2SC4783: Features: • High DC current gain: hFE2 = 200 TYP.• High voltage: VCEO = 50 VSpecifications Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V ...

2SC4783 Data Sheet

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Part Number:: 2SC4783
Supply Ability:: 5000

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Upload time: 2024/5/28

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Recent History
What is this?

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Product Details

Description

Features:

• High DC current gain: h_FE2 = 200 TYP.
• High voltage: V_CEO= 50 V

Specifications

Parameter	Symbol	Ratings	Unit
Collector to base voltage	V_CBO	60	V
Collector to emitter voltage	V_CEO	50	V
Emitter to base voltage	V_EBO	5.0	V
Collector current(DC)	I_C(DC)	100	mA
Collector Current (pulse) Note1	I_C(pulse)	200	mA
Total Power Dissipation (TA = 25°C) Note2	PT	200	mW
Junction temperature	T_j	150
Storage temperature	T_stg	-55 to +150

Notes 1. PW 10 ms, Duty Cycle 50%
2. When mounted on ceramic substrate of 3.0 cm2 x 0.64 mm

Description

The 2SC4783 is NPN silicon epitaxial transistor.

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2SC4783

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