Features: ` Large current (IC=2A).` Adoption of MBIT process.` High DC current gain (hFE=800 to 3200).` Low collector-to-emitter saturation voltage (VCE(sat)0.5V).` High emitter-to-base voltage (VEBO15V).` Large power type such as PC=1.5W when used without heatsink.` It is possible to make applian...
2SC4736: Features: ` Large current (IC=2A).` Adoption of MBIT process.` High DC current gain (hFE=800 to 3200).` Low collector-to-emitter saturation voltage (VCE(sat)0.5V).` High emitter-to-base voltage (VEB...
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Parameter | Symbol | Conditions | Ratings | Unit |
Collector-to-Base Voltage | VCBO | 80 | V | |
Collector-to-Emitter Voltage | VCEO | 60 | V | |
Emitter-to-Base Voltage | VEBO | 15 | V | |
Collector Current | IC | 2 | A | |
Collector Current (Pulse) | ICP | 4 | A | |
Base Current | IB | 400 | mA | |
Collector Dissipation | PC | 1.5 | W | |
Junction Temperature | Tj | 150 | °C | |
Storage Temperature | Tstg | 55 to +150 | °C |
Absolute maximum ratings | |
---|---|
VCEO [V] | 60 |
VEBO [V] | 15 |
IC [A] | 2 |
PC [W] | 1.5 |
Electrical characteristics | |
---|---|
hFE min | 800 |
hFE max | 3200 |
VCE [V] | 5 |
IC [mA] | 500 |
VCE (sat) typ [V] | 0.2 |
VCE (sat) max [V] | 0.5 |
IC [mA] | 1000 |
IB [mA] | 20 |