2SC4715

The 2SC4715 is designed as silicon NPN epitaxial planer type for low-frequency high breakdown voltage amplification.
2SC4715  has three features. The first one is satisfactory linearity of forward current transfer ratio hFE. The second one is it would have high collector to emitter voltage Vceo. The third one is it would have small collector output capacitance Cob. That are all the main features.

Some absolute maximum ratings of 2SC4715 have been concluded into several points as follow. The first one is about its collector to base voltage which would be 150V. The second one is about its collector to emitter voltage which would be 150V. The third one is about its emitter to base voltage which would be 5V. The fourth one is about its peak collector current which would be 100mA. The fifth one is about its collector current which would be 50mA. The sixth one is about its collector power dissipation which would be 300mW. The seventh one is about its junction temperature which would be 150°C. The eighth one is about its storage temperature which would be from −55 to +150°C.

Also some electrical characteristics about 2SC4715. The first one is about its collector cutoff current which would be 1 A. The second one is about its collector to emitter voltage which would be min 150V. The third one is about its emitter to base voltage which would be min 5V. The fourth one is about its forward current transfer ratio which would be min 130 and max 330 with condition of Vce=5V and Ic=10mA. The fifth one is about its collector to emitter saturation voltage which would be max 1V with condition of Ic=30mA and Ib=3mA. The sixth one is about its collector output capacitance which would be max 3pF. The seventh one is about its transition frequency which would be typ 160MHz. The eighth one is about its noise voltage which would be typ 150mV. And so on. For more information please contact us.