Features: Adoption of MBIT process.High DC current gain.High VEBO (VEBO 25V).High reverse hFE (150 typ).Small ON resistance [Ron=1(IB=5mA)].PinoutSpecifications Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V ...
2SC4694: Features: Adoption of MBIT process.High DC current gain.High VEBO (VEBO 25V).High reverse hFE (150 typ).Small ON resistance [Ron=1(IB=5mA)].PinoutSpecifications Parameter Symbol Rating ...
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Parameter |
Symbol |
Rating |
Unit |
Collector-base voltage |
VCBO |
50 |
V |
Collector-emitter voltage |
VCEO |
20 |
V |
Emitter-base voltage |
VEBO |
25 |
V |
Collector current |
IC |
500 |
mA |
Collector current (pulse) |
ICP |
800 |
mA |
Base current |
IB |
100 |
mA |
Collector dissipation |
PC |
150 |
Mw |
Junction temperature |
Tj |
150 |
|
Storage temperature |
Tstg |
-55 to +150 |
Absolute maximum ratings | |
---|---|
VCEO [V] | 20 |
VEBO [V] | 25 |
IC [A] | 0.5 |
PC [W] | 0.15 |
Electrical characteristics | |
---|---|
hFE min | 300 |
hFE max | 1200 |
VCE [V] | 5 |
IC [mA] | 10 |
VCE (sat) typ [V] | 0.12 |
VCE (sat) max [V] | 0.5 |
IC [mA] | 100 |
IB [mA] | 2 |