Features: · Adoption of MBIT process.· Low saturation voltage.· Fast switching speed.· Large current capacity.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 30 V Collector-to-Emitter Voltage VCEO 20 V Emitter-to-Base Voltage...
2SC4675: Features: · Adoption of MBIT process.· Low saturation voltage.· Fast switching speed.· Large current capacity.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-to-B...
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Parameter | Symbol | Conditions | Ratings | Unit |
Collector-to-Base Voltage | VCBO | 30 | V | |
Collector-to-Emitter Voltage | VCEO | 20 | V | |
Emitter-to-Base Voltage | VEBO | 5 | V | |
Collector Current | IC | 8 | A | |
Collector Current (Pulse) | ICP | 12 | A | |
Base Current | IB | 1.5 | A | |
Collector Dissipation | PC | 1.5 | W | |
Tc=25°C | 10 | W | ||
Junction Temperature | Tj | 150 | °C | |
Storage Temperature | Tstg | 55 to +150 | °C |
Absolute maximum ratings | |
---|---|
VCEO [V] | 20 |
IC [A] | 8 |
PC [W] | 10
Tc=25°C |
Electrical characteristics | |
---|---|
hFE min | 100 |
hFE max | 400 |
VCE [V] | 2 |
IC [A] | 0.5 |
VCE (sat) typ [V] | 0.22 |
VCE (sat) max [V] | 0.4 |
IC [A] | 5 |
IB [mA] | 250 |