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2SC458(LG)

Application· Low frequency low noise amplifierSpecifications Item Symbol 2SC458(LG) 2SC2310 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO 5 5 V Collector current ...

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2SC458(LG): Application· Low frequency low noise amplifierSpecifications Item Symbol 2SC458(LG) 2SC2310 Unit Collector to base voltage VCBO 30 55 V Collector to emitter volt...

2SC458(LG) Data Sheet

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Part Number:
2SC458(LG)
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Application

·  Low frequency low noise amplifier


Specifications

Item
Symbol
2SC458(LG)
2SC2310
Unit
Collector to base voltage
VCBO
30
55
V
Collector to emitter voltage
VCEO
30
50
V
Emitter to base voltage
VEBO
5
5
V
Collector current
IC
100
100
mA
Emitter current
IE
-100
-100
mA
Collector power dissipation
PC
200
200
mW
Junction temperature
Tj
150
150
Storage temperature
Tstg
55 to +150
55 to +150



Description

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)

Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself.




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