Features: ` High fT : fT=1.2GHz typ.` High breakdown voltage : VCEO80V.` High current : IC=500mA.` Small reverse transfer capacitance : Cre=3.8pF (VCB=30V).` Adoption of FBET process.Specifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 100 V Co...
2SC4563: Features: ` High fT : fT=1.2GHz typ.` High breakdown voltage : VCEO80V.` High current : IC=500mA.` Small reverse transfer capacitance : Cre=3.8pF (VCB=30V).` Adoption of FBET process.Specifications ...
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Parameter | Symbol | Conditions | Ratings | Unit |
Collector-to-Base Voltage | VCBO | 100 | V | |
Collector-to-Emitter Voltage | VCEO | 80 | V | |
Emitter-to-Base Voltage | VEBO | 3 | V | |
Collector Current | IC | 500 | mA | |
Collector Current (Pulse) | ICP | 1.0 | A | |
Collector Dissipation | PC | 1.3 | W | |
Tc=25°C | 10 | W | ||
Junction Temperature | Tj | 150 | °C | |
Storage Temperature | Tstg | 55 to +150 | °C |