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2SC4552

Features: • High hFE and low VCE(sat): hFE 100 (VCE = 2 V, IC = 3 A) VCE(sat) 0.3 V (IC = 8 A, IB = 0.4 A)• Mold package that does not require an insulating board or insulation bushingSpecifications Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V C...

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SeekIC No. : 004223018 Detail

2SC4552: Features: • High hFE and low VCE(sat): hFE 100 (VCE = 2 V, IC = 3 A) VCE(sat) 0.3 V (IC = 8 A, IB = 0.4 A)• Mold package that does not require an insulating board or insulation bushing...

2SC4552 Data Sheet

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Part Number:
2SC4552
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/12

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Product Details

Description



Features:

• High hFE and low VCE(sat): hFE 100 (VCE = 2 V, IC = 3 A) VCE(sat) 0.3 V (IC = 8 A, IB = 0.4 A)
• Mold package that does not require an insulating board or insulation bushing




Specifications

Parameter Symbol Ratings Unit
Collector to base voltage VCBO 100 V
Collector to emitter voltage VCEO 60 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) 15 A
Collector current (pulse) IC(pulse)* 30 A
Base current (DC) IB(DC) 7.5 A
Total power dissipation PT (Tc = 25°C) 30 W
Total power dissipation PT (Ta = 25°C) 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
* PW 300 µs, duty cycle 10%




Description

The 2SC4552 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators.

In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost.






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